Spin delocalization of interstitial iron in silicon

Precipitation of interstitial iron in multicrystalline silicon

The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell efficiencies. Studies have found that the optimal temperature lies in the range of 500 o C-600 o C. In this paper, we present experimental results on quantitatively analysing the precipitation of interstitial Fe in multicrystalline silicon wafers during the 500 o C-600 ...

Hydrogen Passivation of Interstitial Iron in Silicon by Annealing with Pecvd Silicon Nitride Films

This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found ...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging

We present high-resolution images of the lateral distribution of interstitial iron across wafers from various positions along the length of a directionally solidifiedmulticrystalline silicon ingot. Iron images were taken on wafers in the as-cut state and also after two different phosphorus gettering steps performed at 8458C for 30min, one with an additional anneal at 6008C for 5 h (referred to ...

Self-interstitial Clusters in Silicon

Local density functional calculations on the isolated silicon interstitial, I1 and its aggregates, I2, I3 and I4 have been performed. Several geometries are considered for each aggregate and we report preliminary results on their energetically favourable structures. The properties of the low energy structures are calculated and compared with experiment.